Postdoctoral Appointee - MSD Atomic Memory for Microelectronics

The Materials Science Division (MSD) at Argonne National Lab (ANL) is looking for an experimental postdoctoral candidate to conduct fundamental research in the areas of optically addressable atomic memory for microelectronics. This project is focused on exploring nonradiative resonant energy transfer between atoms-trap defects in oxides as a new platform to explore how optical selection rules are modified at the near field and how such a new system can enable optically addressable atomic memory with ultrahigh storage density.